A new structure of In-based ohmic contacts ton-type GaAs
Identifieur interne : 000073 ( Main/Exploration ); précédent : 000072; suivant : 000074A new structure of In-based ohmic contacts ton-type GaAs
Auteurs : RBID : ISTEX:339_1996_Article_BF01575088.pdfEnglish descriptors
Abstract
Electrical, structural and reaction characteristics of In-based ohmic contacts ton-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated bye-beam sputtering Ni, NiIn and Ge targets on VPE-grownn+-GaAs film (≈1 μm, 2 × 1018 cm−3) in ultrahigh vacuum as the structure of Ni(200 Å)/ NiIn(100 Å)/Ge(40 Å)/n+-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500–900°C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3ln. The lowest specific contact resistivity (ϱc) of (1.5 ± 0.5) × 10−6 cm2 measured by the Transmission Line Method (TLM) was obtained after annealing at 700°C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1−xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.
DOI: 10.1007/BF01575088
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Box 912, 100083, Beijing, People's Republic of China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>National Laboratory for Surface Physics, Institute of Semiconductors, CAS, P. O. 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The contacts were fabricated bye-beam sputtering Ni, NiIn and Ge targets on VPE-grownn+-GaAs film (≈1 μm, 2 × 1018 cm−3) in ultrahigh vacuum as the structure of Ni(200 Å)/ NiIn(100 Å)/Ge(40 Å)/n+-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500–900°C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3ln. The lowest specific contact resistivity (ϱc) of (1.5 ± 0.5) × 10−6 cm2 measured by the Transmission Line Method (TLM) was obtained after annealing at 700°C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1−xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="03c9825a63ab2d14883e02042c60ae172f6a2304"><titleInfo lang="eng"><title>A new structure of In-based ohmic contacts ton-type GaAs</title></titleInfo><name type="personal"><namePart type="given">S. A.</namePart><namePart type="family">Ding</namePart><role><roleTerm type="text">author</roleTerm></role><description>DING@fhiberlin.mpg.de</description><affiliation>National Laboratory for Surface Physics, Institute of Semiconductors, CAS, P. O. Box 912, 100083, Beijing, People's Republic of China</affiliation></name><name type="personal"><namePart type="given">C. C.</namePart><namePart type="family">Hsu</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>National Laboratory for Surface Physics, Institute of Semiconductors, CAS, P. O. Box 912, 100083, Beijing, People's Republic of China</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1994-08-01</dateCreated><dateCaptured encoding="w3cdtf">1995-09-22</dateCaptured><dateValid encoding="w3cdtf">2005-04-12</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Electrical, structural and reaction characteristics of In-based ohmic contacts ton-GaAs were studied. 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The lowest specific contact resistivity (ϱc) of (1.5 ± 0.5) × 10−6 cm2 measured by the Transmission Line Method (TLM) was obtained after annealing at 700°C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1−xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.</abstract><subject lang="eng"><genre>PACS</genre><topic>68.55</topic><topic>72.20</topic><topic>73.30</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1996</partNumber><partNumber>Volume: 62</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-03-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 20</identifier><recordInfo><recordOrigin>Springer-Verlag, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF01575088</identifier><identifier type="matrixNumber">Art10</identifier><identifier type="local">BF01575088</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>241</start><end>245</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1996</recordOrigin><recordIdentifier>339_1996_Article_BF01575088.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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